| PART |
Description |
Maker |
| KBE00S009M-D411 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
Samsung Electronic
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| H55S1G62MFP-60 H55S1G62MFP-75 H55S1G62MFP-A3 |
1Gb (64Mx16bit) Mobile SDRAM
|
Hynix Semiconductor
|
| EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM
256MB Unbuffered DDR SDRAM DIMM
1GB Unbuffered DDR SDRAM DIMM
512MB Registered DDR SDRAM DIMM
256MB DDR SDRAM SO DIMM
512MB Unbuffered DDR SDRAM DIMM
1GB DDR SDRAM SO DIMM
1GB Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http://
ELPIDA MEMORY INC
|
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
| HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
